Datasheet > RM60N40LD

RM60N40LD

更新时间： 2024-06-27 12:13:26

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
9页	236K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 60 A;Rds-on (typ) (mOhms) : 7.3 mOhms;Total Gate Charge (nQ) typ : 29 nQ;Maximum Power Dissipation (W) : 65 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 1800 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK)

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RM60N40LD 数据手册

RM60N40LD

N-Channel Enhancement Mode Power MOSFET

Description

The RM60N40LD uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=40V,I_D=60A

Schematic diagram

R_DS(ON)<13mΩ @ V_GS=10V

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

Application

ƽ Loadꢀswitching

Marking and pin assignment

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM60N40LDV

100% UIS TESTED!

TO-252-2L top view

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM60N40LD

TO-252-2L

-ꢀ

60N40

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

200

I_DM

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.43

400

W/ć

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2018-11/15

REV:A

12 3 4 5 6 7...9

中文翻译

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