Datasheet > RM60N150T2

RM60N150T2

更新时间： 2024-10-15 18:09:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	195K
描述
Vdss (V) : 150 V;Id @ 25C (A) : 53 A;Rds-on (typ) (mOhms) : 17.5 mOhms;Total Gate Charge (nQ) typ : 29 nQ;Maximum Power Dissipation (W) : 150 W;Vgs(th) (typ) : 2.0 V;Input Capacitance (Ciss) : 2105 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TO-220

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数据手册

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RM60N150T2 数据手册

RM60N150T2

N-Channel Power MOSFET

Feature

High Speed Power Switching, Logic Level

Enhanced Body diode dv/dt capability

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Synchronous Rectification in SMPS

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中文翻译

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