Datasheet > RM60N150DF

RM60N150DF

更新时间： 2024-06-27 12:14:07

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	191K
描述
Vdss (V) : 150 V;Id @ 25C (A) : 60.0 A;Rds-on (typ) (mOhms) : 13 mOhms;Total Gate Charge (nQ) typ : 30.5 nQ;Maximum Power Dissipation (W) : 140 W;Input Capacitance (Ciss) : 2881 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6-8L

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中文翻译

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RM60N150DF 数据手册

RM60N150DF

N-Channel Super Trench Power MOSFET

General Features

ƽ V_DS=150V,I_D=60A

R_DS(ON)<16mΩ @ V_GS=10V

R_DS(ON)<20mΩ @ V_GS=6V

ƽ Excellent gate charge x R_DS(on)product(FOM)

ƽ Very low on-resistance R_DS(on)

ƽ Pb-free lead plating

Schematic Diagram

ƽ 100% UIS tested

Application

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching and synchronous

rectification

100% UIS TESTED!

100% ∆Vds TESTED!

Top View

Bottom View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

1315

RM60N150DF

DFN5X6-8L

ꢀ

-ꢀ

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Symbol

V_DS

V_GS

I_D*

Parameter

Conditions

Min Max Unit

Drain-Source Voltage

150

T_C=25ഒ

Gate-Source Voltage

Drain Current

T_C=25ഒ

T_C=25ഒ, V_GS=10V

T_C=100ഒ, V_GS=10V

T_C=25ഒ, V_GS=10V

T_C=25ഒ

I_D*

Drain Current

38.4

120

140

150

I_DM*^,**

P_tot*

T_stg

Pulsed Source Current

Total Power Dissipation

Storage Temperature

Junction Temperature

Diode Forward Current

Thermal Resistance-Junction to Ambient

ഒ

-55

T_J

I_S

T_C=25ഒ

R_θJA

ഒ/W

R_θJC

Thermal Resistance-Junction to Case

1.3

Surface Mounted on 1 in²pad area, t ꢀ 10 sec

Notes:

2023-08/113

REV:O

** Pulse width ꢀ 1ꢁs, duty cycle ꢀ 2%

*** Limited by bonding wire

12 3 4 5 6 7

中文翻译

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