Datasheet > RM60N100ADF

RM60N100ADF

更新时间： 2024-10-15 18:09:35

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	687K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 60 A;Rds-on (typ) (mOhms) : 8.5 mOhms;Total Gate Charge (nQ) typ : 48 nQ;Maximum Power Dissipation (W) : 105 W;Vgs(th) (typ) : 2.0 V;Input Capacitance (Ciss) : 3500 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6-8L

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RM60N100ADF 数据手册

RM60N100ADF

N-Channel Super Trench Power MOSFET

Description

The RM60N100ADF uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic diagram

General Features

ƽ V_DS=100V,I_D=60A

R_DS(ON)<8.5mΩ @ V_GS=10V

ƽ Excellent gate charge x R_DS(on)product(FOM)

ƽ Very low on-resistance R_DS(on)

ƽ 175 °C operating temperature

ƽ Pb-free lead plating

Marking and pin assignment

ƽ 100% UIS tested

Application

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching and

synchronous

rectification

Halogen-free

100% UIS TESTED!

DFN5X6-8L top view

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM60N100ADF

60NA

DFN5X6-8L

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

V^DS

±20

V^GS

Drain Current-Continuous (Package Limited)

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D

I_D(100ć)

I_DM

240

105

0.7

210

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy^{(Note 5)}

W/ć

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2019-03/15

REV:

12 3 4 5 6 7

中文翻译

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与RM60N100ADF相关器件

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