Datasheet > RM6005AR

RM6005AR

更新时间： 2024-09-17 18:09:15

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	284K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 5.0 A;Rds-on (typ) (mOhms) : 26 mOhms;Total Gate Charge (nQ) typ : 22 nQ;Maximum Power Dissipation (W) : 2.0 W;Input Capacitance (Ciss) : 979 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-223

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RM6005AR 数据手册

RM6005AR

N-Channel Enhancement Mode Power MOSFET

Description

The RM6005AR uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=60V,I_D=5A

R_DS(ON)<35mΩ @ V_GS=10V (Typ.26mΩ)

Schematic diagram

R_DS(ON)<45mΩ @ V_GS=4.5V (Typ.32mΩ)

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

Application

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

Halogen-free

SOT-223-3L view

P/N suffix V means AEC-Q101 qualified, e.g:RM6005ARV

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

6005AR

RM6005AR

SOT-223-3L

Ø330mm

12mm

2500 units

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

V^GS

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

3.5

I_DM

P_D

T_J,T_STG

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

62.5

ć/W

2018-09/15

REV:A

12 3 4 5 6 7 8

中文翻译

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