Datasheet > RM5N650LD

RM5N650LD

更新时间： 2024-11-20 01:19:31

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
8页	525K
描述
N-Channel Super Junction Power MOSFET

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中文翻译

获取价格

技术参数
数据手册

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RM5N650LD 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.84

RM5N650LD 数据手册

RM5N650IP

RM5N650LD

N-Channel Super Junction Power MOSFET ĊĊ

General Description

The series of devices use advanced super junction

technology and design to provide excellent R^DS(ON)with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

V_DS

R_DS(ON).

I_D

650

900

mΩ

Features

ƽNew technology for high voltage device

ƽLow on-resistance and low conduction losses

ƽSmall package

ƽUltra Low Gate Charge cause lower driving requirements

ƽ100% Avalanche Tested

ƽROHS compliant

Application

ƽꢀ Power factor correction˄PFC˅

ƽꢀ Switched mode power supplies(SMPS)

ƽꢀ Uninterruptible Power Supply˄UPS˅

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

RM5N650IP

RM5N650LD

TO-251

5N650

TO-252

5N650

TO-251

TO-252

Table 1. Absolute Maximum Ratings (T_C=25ć)

Parameter

Symbol

Value

Unit

650

f30

Drain-Source Voltage (

VGS=0V˅

VDS

Gate-Source Voltage (VDS=0V)

VGS

Continuous Drain Current at Tc=25°C

I_{D (DC)}

I_{DM (pluse)}

Continuous Drain Current at Tc=100°C

(Note 1)

Pulsed drain current

Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj =

dv/dt

P_D

V/ns

125 °C

Maximum Power Dissipation(Tc=25ć)

Derate above 25°C

0.39

135

2.5

W/°C

Single pulse avalanche energy ^(Note2)

EAS

Avalanche current^{(Note 1)}

I_AR

2016-09

REV:O15

12 3 4 5 6 7 8

中文翻译

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RM5N800TI	RECTRON	获取价格	Vdss (V) : 800 V;Id @ 25C (A) : 5.0 A;Rds-on (typ) (mOhms) : 750 mOhms;Total Gate Charge (
RM5P40S2	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 5.0 A;Rds-on (typ) (mOhms) : 65 mOhms;Total Gate Charge (nQ
RM5P40S2V	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 5.0 A;Rds-on (typ) (mOhms) : 65 mOhms;Total Gate Charge (nQ
RM5P60S8	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 5.0 A;Rds-on (typ) (mOhms) : 53 mOhms;Total Gate Charge (nQ