Datasheet > RM5N60S4

RM5N60S4

更新时间： 2024-11-20 18:09:43

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	341K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 5.0 A;Rds-on (typ) (mOhms) : 46 mOhms;Total Gate Charge (nQ) typ : 8.5 nQ;Maximum Power Dissipation (W) : 2 W;Vgs(th) (typ) : 2 V;Input Capacitance (Ciss) : 450 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-223

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RM5N60S4 数据手册

RM5N60S4

N-ChannelEnhancement Mode Power MOSFET

Description

The RM5N60S4 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=60V,I_D=5A

R_DS(ON)< 55mȍ @ V_GS=10V˄Typ: 46mȍ˅

R_DS(ON)< 80mȍ @ V_GS=4.5V˄Typ: 60mȍ˅

Schematic diagram

Application

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM5N60S4V

SOT-223-3L view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2500 units

SOT-223-3L

Ø330mm

12mm

RM5N60S4

6005

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

I_DM

3.5

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient^{(Note 2)}

R_șJA

62.5

ć/W

Electrical Characteristics (T_A=25ćunless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=250ȝA

V_DS=60V,V_GS=0V

ȝA

2019-09/15

REV:

12 3 4 5 6 7

中文翻译

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