Datasheet > RM5N500IP

RM5N500IP

更新时间： 2024-10-15 18:09:39

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	251K
描述
Vdss (V) : 500 V;Id @ 25C (A) : 5.0 A;Rds-on (typ) (mOhms) : 1100 mOhms;Total Gate Charge (nQ) typ : 17 nQ;Maximum Power Dissipation (W) : 52 W;Vgs(th) (typ) : 3.0 V;Input Capacitance (Ciss) : 570 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-251

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RM5N500IP 数据手册

RM5N500IP

N-Channel Enhancement Mode Power MOSFET

Description

The RM5N500IP uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

V_DS=500V,I_D=5A

Schematic diagram

R_DS(ON)<1.5ꢀ @ V_GS=10V

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Special process technology for high ESD capability

Application

Pin assignment

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

Halogen-free

100% UIS TESTED!

100% ꢀVds TESTED!

TO-251 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

5N500

RM5N500IP

TO-251

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Parameter Symbol

Limit

500

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

V^GS

I_D

±±0

5.0

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

I_D(100

)

±.1

I_DM

Maximum Power Dissipation

Derating factor

Single pulse avalanche energy ^{(Note 5)}

P_D

0.42

280

E_AS

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

2020-0±/57

REV:O

12 3 4 5 6 7

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