Datasheet > RM5N40S2V

RM5N40S2V

更新时间： 2024-06-27 12:12:05

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	1792K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 5.0 A;Total Gate Charge (nQ) typ : 5.5 nQ;Maximum Power Dissipation (W) : 1.25 W;Input Capacitance (Ciss) : 593 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23;Certified (AEC-Q101...etc) : AEC-Q101

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中文翻译

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数据手册

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RM5N40S2V 数据手册

RM5N40S2V

N-Channel Enhancement Mode Power MOSFET

Features

⚫ 40V,5A

R_{DS ON}_）<40mΩ＠V_GS=10V TYP:30mΩ

（

R_{DS ON}_）<60mΩ＠V_GS=4.5V TYP:40mΩ

（

⚫ Lead free and Green Device Available

⚫ Excellent RDS(ON) and Low Gate Charge

⚫ Lead free product Fast switching speed

Applications

⚫ Load Switch

⚫ PWM Application

⚫ Power management

SOT-23

Halogen-free

P/N suffix V means AEC-Q101 uqalified, e.g:RM5N40S2V

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity (PCS)

5040

RM5N40S2V

SOT-23

3000

ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Parameter

Symbol

V_DS

V_GS

I_D

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous Drain Current (T_a=25℃)

Continuous Drain Current (T_a=100℃)

Pulsed Drain Current⁽¹⁾

I_D

I_DM

Power Dissipation (T_a=25℃)

Junction Temperature

P_D

1.6

℃

T_J

150

Storage Temperature

T_STG

-40~ +150

2023-06/59

REV:O

12 3 4 5 6 7

中文翻译

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