Datasheet > RM5N40S2

RM5N40S2

更新时间： 2024-11-18 18:09:39

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	246K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 5.0 A;Total Gate Charge (nQ) typ : 5.5 nQ;Maximum Power Dissipation (W) : 1.25 W;Input Capacitance (Ciss) : 593 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

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中文翻译

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数据手册

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RM5N40S2 数据手册

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RM5N40S2

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N-Channel Enhancement Mode Power MOSFET

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Features

ꢀ 40V,5A

R_DS

_˅ꢀ40m¡˜V_GS=10V TYP:30m¡

_˅ꢀ60m¡˜V_GS=4.5V TYP:40m¡

ꢀ Lead free and Green Device Available

ꢀ Excellent RDS(ON) and Low Gate Charge

ꢀ Lead free product Fast switching speed

Applications

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ꢀ Load Switch

ꢀ PWM Application

ꢀ Power management

Halogen-free

SOT-23

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity (PCS)

5040

RM5N40S2

SOT-23

3000

ABSOLUTE MAXIMUM RATINGS (T_a=25ć unless otherwise noted)

Parameter

Symbol

V_DS

V_GS

I_D

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

f20

Continuous Drain Current (T_a=25ć)

Continuous Drain Current (T_a=100ć)

Pulsed Drain Current⁽¹⁾

I_D

I_DM

Power Dissipation (T_a=25ć)

Junction Temperature

P_D

1.6

T_J

150

Storage Temperature

T_STG

-40~ +150

2023-02/59

REV:A

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12 3 4 5 6 7

中文翻译

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