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RM5N40S2 PDF预览

RM5N40S2

更新时间: 2024-10-15 18:09:39
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
7页 246K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 5.0 A;Total Gate Charge (nQ) typ : 5.5 nQ;Maximum Power Dissipation (W) : 1.25 W;Input Capacitance (Ciss) : 593 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

RM5N40S2 数据手册

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ꢀ ꢀ  
RM5N40S2  
N-Channel Enhancement Mode Power MOSFET  
Features  
40V,5A  
RDS  
RDS  
˅40m¡˜VGS=10V TYP:30m¡  
˅60m¡˜VGS=4.5V TYP:40m¡  
˄
ON  
˄
ON  
Lead free and Green Device Available  
Excellent RDS(ON) and Low Gate Charge  
Lead free product Fast switching speed  
Applications  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Load Switch  
PWM Application  
Power management  
Halogen-free  
SOT-23  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity (PCS)  
5040  
RM5N40S2  
SOT-23  
-
-
3000  
ABSOLUTE MAXIMUM RATINGS (Ta=25ć unless otherwise noted)  
Parameter  
Symbol  
VDS  
VGS  
ID  
Value  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
40  
f20  
V
Continuous Drain Current (Ta =25ć)  
Continuous Drain Current (Ta =100ć)  
Pulsed Drain Current(1)  
5
A
ID  
3
20  
A
IDM  
A
Power Dissipation (Ta =25ć)  
Junction Temperature  
PD  
1.6  
W
ć
ć
TJ  
150  
Storage Temperature  
TSTG  
-40~ +150  
2023-02/59  
REV:A  
ꢀ ꢀ  
ꢀ ꢀ  

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