Datasheet > RM5N30S6

RM5N30S6

更新时间： 2024-06-27 12:14:02

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	197K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 5.0 A;Total Gate Charge (nQ) typ : 7.2 nQ;Maximum Power Dissipation (W) : 1.1 W;Input Capacitance (Ciss) : 572 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23-6L

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中文翻译

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RM5N30S6 数据手册

RM5N30S6

N-Ch 30V Fast Switching MOSFETs

Pin Configuration

Description

The RM5N30S6 is the high cell density trenched

N-ch MOSFETs, which provides excellent RDSON

and efficiency for most of the small power

switching and load switch applications.

The RM5N30S6 meet the RoHS and Green Product

requirement with full function reliability approved.

Green Device Available

Super Low Gate Charge

Excellent CdV/dt effect decline

Advanced high cell density Trench

technology

Halogen-free

Product Summary

BVDSS

RDS ON

SOT-23-6 top view

30V

28mΩ

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Ø180mm

Tape width

Quantity

5N30

RM5N30S6

SOT-23-6

8 mm

3000 units

Absolute Maximum Ratings

Drain-Source Voltageꢀ

Gate-SouUce Voltage

V_DS

V_GS

f20ꢀ

Continuous Drain Current, V_GS@ 10V¹

PulsedꢀDrain Current²

I_D@T_A25đ

I_D@T_A70đ

I_DM

Total Power Dissipation³

P_D@T_A25đ

T_STG

1.1

Storage Temperature Range

-55 to 150

Operating Junction Temperature Range

T_J

ꢀ

Thermal Data

Thermal Resistance Junction-ambient¹

Thermal Resistance Junction-Case¹

R_θJA

R_θJC

110

---

đ/W ꢀ

đ/Wꢀ

2022-03/83

REV:O

12 3 4 5 6

中文翻译

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