Datasheet > RM5N150S8

RM5N150S8

更新时间： 2024-08-14 10:18:50

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
4页	180K
描述
Vdss (V) : 150 V;Id @ 25C (A) : 4.6 A;Rds-on (typ) (mOhms) : 63 mOhms;Total Gate Charge (nQ) typ : 6.5 nQ;Maximum Power Dissipation (W) : 3.1 W;Vgs(th) (typ) : 2.0 V;Input Capacitance (Ciss) : 625 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOP-8

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RM5N150S8 数据手册

RM5N150S8

N-Channel Enhancement Mode Power MOSFET

Description

The RM5N150S8 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

Schematic diagram

V_DS= 150V,I_D=4.6A

R_DS(ON)< 75mΩ @ V_GS=10V (Typ:63mΩ)

R_DS(ON)< 88mΩ @ V_GS=4.5V (Typ:70m Ω )

Special process technology for high ESD capability

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Marking and pin assignment

Application

DC/DC Primary Side Switch

Telecom/Server

Synchronous Rectification

Halogen-free

SOP-8 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

4000 units

1±mm

RM5N150S8

Ø330mm

SOP-8

5N150

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

150

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±±0

V^GS

4.6

±.9

I_D

I_D(100

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

I_DM

Maximum Power Dissipation

3.1

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient^{(Note ±)}

R_θJA

±0±0-03/69

REV:B

12 3 4

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