Datasheet > RM5A1P30S6

RM5A1P30S6

更新时间： 2024-06-27 12:11:38

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	303K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 5.1 A;Rds-on (typ) (mOhms) : 32 mOhms;Total Gate Charge (nQ) typ : 8 nQ;Maximum Power Dissipation (W) : 1.56 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 757 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23-6L

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RM5A1P30S6 数据手册

RM5A1P30S6

P-Channel Enhancement Mode Power MOSFET

Description

The RM5A1P30S6 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a

load switch or in PWM applications.

General Features

V_DS= -30V,I_D= -5.1A

Schematic diagram

R_DS(ON)< 46mΩ @ V_GS=-4.5V

_DS(ON)< 32mΩ @ V_GS=-10V

High power and current handing capability

Lead free product is acquired

Surface mount package

Application

PWM applications

Load switch

Power management

SOT-23-6 top view

P/N suffix V means AEC-Q101 qualified, e.g:RM5A1P30S6V

Halogen-free

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

8 mm

Quantity

5A1P30

RM5A1P30S6

SOT-23-6

Ø180mm

3000 units

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter Symbol

Limit

-30

Unit

Drain-Source Voltage

V^DS

V^GS

I_D

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

-5.1

-20.4

1.56

I_DM

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient^{(Note 2)}

R_θJA

Electrical Characteristics (TA=25 unless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BV_DSS

V_GS=0V I_D=-250μA

-30

2019-04/57

REV:C

12 3 4 5 6

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