RM4Z

更新时间： 2024-11-04 06:08:15

品牌	Logo	应用领域
EIC		整流二极管
页数	文件大小	规格书
2页	40K
描述
SILICON RECTIFIER DIODES

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中文翻译

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数据手册

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RM4Z 数据手册

SILICON RECTIFIER DIODES

RM4 - RM4Z

DO - 201AD

PRV : 100 - 400 Volts

Io : 1.7 Ampere

FEATURES :

* High current capability

* High surge current capability

* High reliability

1.00 (25.4)

0.21 (5.33)

MIN.

0.19 (4.83)

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

0.375 (9.53)

0.285 (7.24)

MECHANICAL DATA :

1.00 (25.4)

* Case : DO-201AD Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

0.052 (1.32)

MIN.

0.048 (1.22)

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 1.21 grams

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specifie.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

Maximum Reverse Voltage

SYMBOL

VRM

RM4Y

100

RM4Z

200

RM4

400

UNIT

Maximum Peak Reverse Surge Voltage

Maximum Average Forward Current

V^RSM

150

250

450

I^F(AV)

1.7 (3.0 A is with Heatsink)

200

Maximum Peak Forward Surge Current

Half-cycle Sine wave, 50 Hz, Single Shot

IFSM

Maximum Forward Voltage at I^F= 3.0 A

I^R

0.95

Maximum Reverse Current

at VR = VRmax.

Ta = 25 °C

Ta = 150 °C

μA

°C

I^R(H)

Junction Temperature Range

Storage Temperature Range

- 40 to + 150

T^STG

Page 1 of 2

Rev. 02 : March 25, 2005

中文翻译

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