Datasheet > RM4N500LD

RM4N500LD

更新时间： 2024-06-27 12:12:37

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	383K
描述
Vdss (V) : 500 V;Id @ 25C (A) : 4.0 A;Rds-on (typ) (mOhms) : 1500 mOhms;Total Gate Charge (nQ) typ : 18 nQ;Maximum Power Dissipation (W) : 54W;Vgs(th) (typ) : 3.5 V;Input Capacitance (Ciss) : 480 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK)

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RM4N500LD 数据手册

RM4N500LD

4A,,500V N-Channel Power MOSFET

Features

TO-252

4A, 500V, RDS(on) = 1.5Ω(MAX) @VGS = 10 V

100% avalanche tested

High switching speed

General Description

Package:TO-252

The

is an N-channel MOSFET adopting advanced technology to provide

RM4N500LD

customers with DMOS, planar stripe technology. This technology is designed to meet the

requirements of the minimum on-state resistance and perfect switching performance. It also

can withstand high energy pulse in the avalanche and communication mode.

The

can be used in applications, such as active power factor correction, high

RM4N500LD

efficiency switched mode power supplies, electronic lamp ballasts based on half bridge

topology.

Absolute Maximum Ratings

Symbol

V_DSS

V_GSS

I_D

Parameter

Spec

500

Units

Drain-Source Voltage

Gate-Source Voltage

±±0

Drain Current -Continuous(Tc=25ć)

Drain Current -Pulsed

I_DM

I_AR

Avalanche Current

E_AS

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (TC=25ć)

-Derate above 25ć

(Note 1)

±00

V/ns

E_AR

7.±

dv/dt

4.5

P_D

0.±5

+150

-55 to +150

W/ć

T_J

Junction Temperature

T_STG

Storage Temperature

Thermal Characteristics

Symbol

Parameter

Typ

Max

2.1

Units

ć/W

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

110

2016-11

REV:O15

12 3 4 5 6

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