Datasheet > RM4606S8 (P)

RM4606S8 (P)

更新时间： 2024-11-22 18:06:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
10页	625K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 7.0 A;Rds-on (typ) (mOhms) : 28 mOhms;Total Gate Charge (nQ) typ : 9.2 nQ;Maximum Power Dissipation (W) : 2.0 W;Vgs(th) (typ) : 1.9 V;Input Capacitance (Ciss) : 520 pF;Polarity : Dual;Mounting Style : SMD/SMT;Package / Case : SOP-8

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RM4606S8 (P) 数据手册

RM4606S8

N and P-Channel Enhancement Mode Power MOSFET

Description

The RM4606S8 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge . The complementary

MOSFETs may be used to form a level shifted high side

switch, and for a host of other applications.

N-channel

P-channel

Schematic diagram

General Features

ƽ N-Channel

V_DS= 30V,I_D=6.5A

R_DS(ON)< 30mȍ @ V_GS=10V

ƽ P-Channel

V_DS= -30V,I_D= -7A

Marking and pin assignment

R_DS(ON)< 33mȍ @ V_GS=-10V

ƽ High power and current handing capability

ƽ Lead free product is acquired

ƽ Surface mount package

Halogen-free

SOP-8 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM4606S8

12mm

SOP-8

Ø330mm

4606

4000PCS

Absolute Maximum Ratings (T_A=25ććunless otherwise noted)

Parameter

Symbol

V_DS

N-Channel P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

-30

±20

V_GS

T_A=25ć

T_A=70ć

6.5

-7

Continuous Drain Current

I_D

5.4

-5.8

Pulsed Drain Current ^{(Note 1)}

Maximum Power Dissipation

I_DM

P_D

-30

T_A=25ć

2.0

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^(Note2)

R_șJA

N-Ch

P-Ch

62.5

ć/W

Thermal Resistance,Junction-to-Ambient ^(Note2)

2022-05/15

REV:B

12 3 4 5 6 7...10

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