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RM4435 PDF预览

RM4435

更新时间: 2024-08-01 14:05:40
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
9页 192K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 9.1 A;Rds-on (typ) (mOhms) : 16 mOhms;Total Gate Charge (nQ) typ : 30 nQ;Maximum Power Dissipation (W) : 3.1 W;Vgs(th) (typ) : 1.5 V;Input Capacitance (Ciss) : 1600 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOP-8

RM4435 数据手册

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RM4435  
P-ChannelEnhancement Mode Power MOSFET  
D
Description  
The RM4435 use s advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with gate  
voltages as low as 4.5V.  
G
S
General Features  
Schematic diagram  
VDS = -30V,ID = -9.1A  
R
DS(ON) < 35mΩ @ VGS=-4.5V  
DS(ON) < 20mΩ @ VGS=-10V  
R
High power and current handing capability  
Lead free product is acquired  
Surface mount package  
Marking and pin assignment  
Application  
Battery Switch  
Load switch  
Power management  
SOP-8 top view  
Tape width  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Quantity  
4000 units  
4435  
RM4435  
SOP-8  
Ø330mm  
12mm  
Absolute Maximum Ratings (TA=25 unless otherwise noted)  
Parameter Symbol  
Limit  
-30  
Unit  
V
Drain-Source Voltage  
VDS  
Gate-Source Voltage  
20  
V
VGS  
TC =25  
TC =70  
TA =25  
TA =70  
-11  
-9  
Continuous Drain Current (TJ =150  
)
A
ID  
-9.1  
-7.2  
Drain Current-Pulsed (Note 1)  
Maximum Power Dissipation  
-50  
A
IDM  
PD  
3.1  
W
Operating Junction and Storage Temperature Range  
-55 To 150  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Ambient (Note 2)  
RθJA  
40  
/W  
2018-12/15  
REV:A  

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