Datasheet > RM4435

RM4435

更新时间： 2024-11-18 18:09:43

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
9页	192K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 9.1 A;Rds-on (typ) (mOhms) : 16 mOhms;Total Gate Charge (nQ) typ : 30 nQ;Maximum Power Dissipation (W) : 3.1 W;Vgs(th) (typ) : 1.5 V;Input Capacitance (Ciss) : 1600 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOP-8

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RM4435 数据手册

RM4435

P-ChannelEnhancement Mode Power MOSFET

Description

The RM4435 use s advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 4.5V.

General Features

Schematic diagram

V_DS= -30V,I_D= -9.1A

_DS(ON)< 35mΩ @ V_GS=-4.5V

_DS(ON)< 20mΩ @ V_GS=-10V

High power and current handing capability

Lead free product is acquired

Surface mount package

Marking and pin assignment

Application

Battery Switch

Load switch

Power management

SOP-8 top view

Tape width

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

4000 units

4435

RM4435

SOP-8

Ø330mm

12mm

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter Symbol

Limit

-30

Unit

Drain-Source Voltage

V^DS

Gate-Source Voltage

V^GS

T_C=25

T_C=70

T_A=25

T_A=70

-11

-9

Continuous Drain Current (T_J=150

)

I_D

-9.1

-7.2

Drain Current-Pulsed ^{(Note 1)}

Maximum Power Dissipation

-50

I_DM

P_D

3.1

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

2018-12/15

REV:A

12 3 4 5 6 7...9

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