Datasheet > RM40N100LD

RM40N100LD

更新时间： 2024-09-14 18:09:11

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	319K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 40.0 A;Rds-on (typ) (mOhms) : 14.5 mOhms;Total Gate Charge (nQ) typ : 94 nQ;Maximum Power Dissipation (W) : 140 W;Vgs(th) (typ) : 3.0 V;Input Capacitance (Ciss) : 3400 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RM40N100LD 数据手册

RM40N100LD

N-Channel Enhancement Mode Power MOSFET

Description

The RM40N100LD uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS= 100V,I_D=40A

R_DS(ON)< 17mꢀ @ V_GS=10V (Typ:14.5mꢀ)

Schematic diagram

ƽ Special process technology for high ESD capability

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

Application

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

Marking and pin assignment

100% UIS TESTED!

100% ꢀVds TESTED!

TO-252-2L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

40N100

RM40N100LD

TO-252-2L

-ꢀ

Absolute Maximum Ratings (T_C=25ććunless otherwise noted)

Parameter

Symbol

V^DS

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

I_D

I_D(100ć)

I_DM

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

160

Maximum Power Dissipation

140

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.94

W/ć

E_AS

520

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2016-12

REV:O15

12 3 4 5 6 7

中文翻译

下载PDF

与RM40N100LD相关器件

型号	品牌	获取价格	描述	数据表
RM40N200TI	RECTRON	获取价格	Vdss (V) : 200 V;Id @ 25C (A) : 40 A;Rds-on (typ) (mOhms) : 36.4 mOhms;Total Gate Charge (
RM40N40DF	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 40 A;Rds-on (typ) (mOhms) : 8.5 mOhms;Total Gate Charge (nQ
RM40N40LD	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 42 A;Rds-on (typ) (mOhms) : 13.5 mOhms;Total Gate Charge (n
RM40N600T7	RECTRON	获取价格	Vdss (V) : 600 V;Id @ 25C (A) : 40 A;Total Gate Charge (nQ) typ : 149 nQ;Maximum Power Dis
RM40P40DF	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 40 A;Rds-on (typ) (mOhms) : 10 mOhms;Total Gate Charge (nQ)
RM40P40DFV	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 40 A;Rds-on (typ) (mOhms) : 10 mOhms;Total Gate Charge (nQ)
RM40P40LD	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 40 A;Rds-on (typ) (mOhms) : 14 mOhms;Total Gate Charge (nQ)
RM412DTTE1R0J	KOA	获取价格	fixed metal film melf resistors
RM412HTTE1R0J	KOA	获取价格	fixed metal film melf resistors
RM4131T/883	RAYTHEON	获取价格	Operational Amplifier, 1 Func, BIPolar, MBCY8,