Datasheet > RM400N40TL

RM400N40TL

更新时间： 2024-10-15 18:09:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	173K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 400 A;Rds-on (typ) (mOhms) : 0.45 mOhms;Total Gate Charge (nQ) typ : 191 nQ;Maximum Power Dissipation (W) : 300 W;Input Capacitance (Ciss) : 10505 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TOLL-8L

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RM400N40TL 数据手册

RM400N40TL

N-Channel Enhancement Mode Power MOSFET

Description

ꢁ

ꢀ

The RM400N40TL uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

V_DS=40V,I_D=400A

ꢂ

R_DS(ON)< 0.5mΩ @ V_GS=10V

R_DS(ON)< 0.7mΩ @ V_GS=6V

Surface-mounted package

Super Trench

Schematic diagram

ꢃ

Advanced trench cell design

Application

Description

Gate(G)

Power Tool appliances

High power inverter system

2,3,4,5,6,7,8

Source(S)

Drain(D)

BMS appliances

Halogen-free

ꢃ

TOLL top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

14000pcs

RM400N40TL

TOLL-8L

13 inch

2000pcs

400N40

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Symbol

Parameter

Drain-Source Voltage

Gate-Source Voltage

Conditions

Min Max Unit

V_DS

T_C=25ȭ

V_GS

400

379

1600

300

175

400

T_C=25ȭ, V_GS=10 V

T_C=100ȭ, V_GS=10 V

T_C=25ȭ, V_GS=10 V

T_C=25ȭ

I_D*^,***

Drain Current

I_DM

Pulsed Drain Current

Drain power dissipation

Storage Temperature

Junction Temperature

Continuous-Source Current

P_tot

T_stg

-55

T_J

I_S

T_C=25ȭ

E_AS

Single Pulsed Avalanche Energy V_DD=40 V, L=1.0 mH

Thermal Resistance-Junction to Ambient

Thermal Resistance-Junction to Case

1984 mJ

R_θJA**

R_θJC**

ȭ/W

0.5

Notes:

2023-06/59

REV:O

Pulse width ꢀ 300 ꢁs, duty cycle ꢀ 2%

Surface Mounted on 1 in²pad area, t ꢀ 10 sec

*** Limited by bonding wire

12 3 4 5 6 7

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