Datasheet > RM380N60D7

RM380N60D7

更新时间： 2024-10-15 18:09:35

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	3419K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 380 A;Rds-on (typ) (mOhms) : 0.97 mOhms;Total Gate Charge (nQ) typ : 157 nQ;Maximum Power Dissipation (W) : 333 W;Input Capacitance (Ciss) : 7530 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-263-7L

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RM380N60D7 数据手册

RM380N60D7

Channel Enhancement Mode MOSFET

N-

Features

BV 60 V

ID 380 A

Ptot 333 W

≦

≧

≦

RDS(ON) ≦ 1.1 mΩ @VGS = 10 V

RDS(ON) ≦ 1.5 mΩ @VGS = 4.5 V

Advanced trench cell design

Low Thermal Resistance

Applications

LCD TV appliances

LCDM appliances

High power inverter system

Halogen-free

TO263-7L

RM380N60D7

380N60

TO263-7L

13"

24mm

800

Symbol

V_DS

Parameter

Drain-Source Voltage

Conditions

Min Max Unit

±20

380

300

1200

333

302

T_C=25℃

V_GS

Gate-Source Voltage

T_C=25℃

T_C=25℃, V_GS=10 V

T_C=100℃, V_GS=10 V

T_C=25℃, V_GS=10 V

T_C=25℃

I_D*^,***

Drain Current (DC)

I_DM*^,**

P_D

Drain Current (Pulsed)

Drain Power Dissipation

Diode Forward Current

I_S

T_C=25℃

E_AS

Single Pulsed Avalanche Energy

V_DD=50 V, L=1.0 mH

-55

1152 mJ

175

T_J, T_stg

Operating Junction and Storage Temperature Range

Thermal Resistance-Junction to Ambient

Thermal Resistance-Junction to Case

℃

R_θJA

40 ℃/W

0.45 ℃/W

R_θJC

Surface mounted on 1 in²pad area, t  10 sec.

Pulse width  300 μs, duty cycle  2%.

Notes:

2024-03/113

REV:O

*** Limited by bonding wire.

12 3 4 5 6 7

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