Datasheet > RM3404

RM3404

更新时间： 2024-11-19 18:10:03

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	1086K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 5.8 A;Rds-on (typ) (mOhms) : 25.5 mOhms;Total Gate Charge (nQ) typ : 5.2 nQ;Maximum Power Dissipation (W) : 1.4 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 255 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

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RM3404 数据手册

RM3404

N-Channel Enhancement Mode Power MOSFET

Description

The RM3404 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge.This device is suitable

for use as a load switch and PWM applications.

Genera Features

● V_DS= 30V,I_D= 5.8A

R_DS(ON)< 31mΩ @ V_GS=10V

Schematic diagram

R_DS(ON)< 43mΩ @ V_GS=4.5V

● High Power and current handing capability

● Lead free product is acquired

● Surface mount package

Marking and pin assignment

Application

●Load switch

●PWM application

SOT-23 top view

Tape width

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

3000 units

3404

RM3404

SOT-23

Ø180mm

8 mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

V^DS

Gate-Source Voltage

±20

V^GS

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

5.8

I_D

I_DM

Maximum Power Dissipation

1.4

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

℃/W

Electrical Characteristics (T_A=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=30V,V_GS=0V

μA

2017-10/15

REV:O

12 3 4 5 6 7

中文翻译

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