Datasheet > RM3402

RM3402

更新时间： 2024-11-19 18:10:07

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
4页	102K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 4.0 A;Rds-on (typ) (mOhms) : 45 mOhms;Total Gate Charge (nQ) typ : 4.34 nQ;Maximum Power Dissipation (W) : 0.35 W;Vgs(th) (typ) : 1 V;Input Capacitance (Ciss) : 390 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

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RM3402 数据手册

RM3402

N-Channel MOSFET

DESCRIPTION

The RM3402 uses advanced trench technology to provide excellent

R_DS(ON), low gate charge and operation with gate voltage as low as 2.5V.

This device is suitable for use as a load switch or in PWM application.

Schematic diagram

FEATURES

ꢀ

Lead free product is acquired

ꢀ

Surface mount package

APPLICATION

SOT-23 top view

ꢀ

P/N suffix V means AEC-Q101 qualified, e.g:RM3402V

Halogen-free

Load Switch and in PWM applications

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

3402

RM3402

SOT-23

Ø180mm ꢀ

8 mm

3000 unitsꢀ

Maximum ratings (T_a=25ꢀ unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

V_DS

V_GS

I_D

Value

Unit

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (note 1)

Power Dissipation

I_DM

P_D

0.35

357

Thermal Resistance from Junction to Ambient (note 2)

Junction Temperature

R_ꢀJA

T_J

ꢀ/W

ꢀ

150

Storage Temperature

T_STG

-55~+150

ꢀ

2019-04/02

REV:O

12 3 4

中文翻译

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