Datasheet > RM3401Y

RM3401Y

更新时间： 2024-10-31 18:09:19

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	361K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 4.2 A;Rds-on (typ) (mOhms) : 47 mOhms;Total Gate Charge (nQ) typ :

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中文翻译

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RM3401Y 数据手册

RM3401Y

P-Channel Enhancement Mode Power MOSFET

Description

The RM3401Y uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a

load switch or in PWM applications.

Schematic diagram

General Features

ƽ V_DS= -30V,I_D= -4.2A

R_DS(ON)< 130mΩ @ V_GS=-2.5V

_DS(ON)< 75mΩ @ V_GS=-4.5V

_DS(ON)< 55mΩ @ V_GS=-10V

B1H

ƽ High power and current handing capability

ƽ Lead free product is acquired

ƽ Surface mount package

Marking and pin Assignment

Application

ƽPWM applications

ƽLoad switch

ƽPower management

Halogen-free

SOT-23-3L top view

P/N suffix V means AEC-Q101 qualified, e.g:RM3401YV

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

3000 units

B1H

RM3401Y

SOT-23-3L

Ø180mm

8 mm

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter Symbol

Limit

-30

Unit

Drain-Source Voltage

V^DS

V^GS

I_D

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

-4.2

-30

I_DM

Maximum Power Dissipation

1.2

P_D

T_J,T_STG

Operating Junction and Storage Temperature Range

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient^{(Note 2)}

R_θJA

104

ć/W

Electrical Characteristics (TA=25ćunless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BV_DSS

V_GS=0V I_D=-250μA

-30

2018-12/15

REV:B

12 3 4 5 6 7

中文翻译

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