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RM3401C PDF预览

RM3401C

更新时间: 2024-10-31 18:09:19
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
5页 365K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 4.2 A;Rds-on (typ) (mOhms) : 50 mOhms;Maximum Power Dissipation (W) : 0.35 W;Vgs(th) (typ) : 0.9 V;Input Capacitance (Ciss) : 954 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

RM3401C 数据手册

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RM3401C  
P-Channel Enhancement Mode Mosfet  
Features  
High dense cell design for extremely low RDS(on).  
Exceptional on-resistance and maximum DC current capability.  
Load/Power Switching.  
Interfacing Switching  
Mechanical Data  
SOT-23 Small Outline Plastic Package.  
Epoxy UL: 94V-0.  
Mounting Position: Any.  
Halogen-free  
V(BR)DSS  
RDS(ON)MAX  
65mΩ@-10V  
75mΩ@-4.5V  
90mΩ@-2.5V  
ID  
30V  
-4.2A  
SOT-23  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity (PCS)  
R1  
RM3401C  
SOT-23  
-
-
3000  
Maximum Ratings & Thermal Characteristics (Ratings at 25ambient temperature unless otherwise specified.)  
Parameters  
Symbol  
Value  
Unit  
Drain-Source Voltage  
VDS  
-30  
V
Gate-Source Voltage  
VGS  
V
f12  
-4.2  
350  
Continuous Drain Current  
Power Dissipation  
Junction Temperature  
ID  
PD  
Tj  
A
mW  
ć
150  
Storage Temperature  
Thermal Resistance From Junction to Ambient (note 2)  
Tstg  
RθJA  
-50-+150  
357  
ć
ć/W  
2023-03/97  
REV:O  

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