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RM3400C PDF预览

RM3400C

更新时间: 2024-06-27 12:12:18
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
5页 394K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 5.8 A;Maximum Power Dissipation (W) : 0.35 W;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

RM3400C 数据手册

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RM3400C  
N-Channel Enhancement Mode Mosfet  
Features  
High dense cell design for extremely low RDS(on).  
Exceptional on-resistance and maximum DC current capability.  
Load/Power Switching.  
Interfacing Switching  
Mechanical Data  
SOT-23 Small Outline Plastic Package.  
Epoxy UL: 94V-0.  
Mounting Position: Any.  
Halogen-free  
V(BR)DSS  
RDS(ON)MAX  
35mΩ@10V  
40mΩ@4.5V  
52mΩ@2.5V  
ID  
30V  
5.8A  
SOT-23  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity (PCS)  
R0  
RM3400C  
SOT-23  
-
-
3000  
Maximum Ratings & Thermal Characteristics (Ratings at 25ambient temperature unless otherwise specified.)  
Parameters  
Symbol  
Value  
Unit  
Drain-Source Voltage  
VDS  
30  
V
Gate-Source Voltage  
VGS  
V
f12  
5.8  
Continuous Drain Current  
Drain Current-Pulsed(note 1)  
Power Dissipation  
ID  
IDM  
PD  
Tj  
A
30  
350  
150  
mW  
ć
Junction Temperature  
Storage Temperature  
Thermal Resistance From Junction to Ambient (note 2)  
Tstg  
RθJA  
-50-+150  
357  
ć
ć/W  
2023-03/97  
REV:O  

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RM3407Y RECTRON

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Vdss (V) : 30 V;Id @ 25C (A) : 4.3 A;Rds-on (typ) (mOhms) : 40 mOhms;Total Gate Charge (nQ
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Vdss (V) : 20 V;Id @ 25C (A) : 4.0 A;Rds-on (typ) (mOhms) : 34 mOhms;Total Gate Charge (nQ
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