Datasheet > RM3400A

RM3400A

更新时间： 2024-06-27 12:13:59

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	870K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 5.8 A;Total Gate Charge (nQ) typ : 10 nQ;Maximum Power Dissipation (W) : 1.4 W;Vgs(th) (typ) : 41 V;Input Capacitance (Ciss) : 825 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

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RM3400A 数据手册

RM3400A

N-Channel Enhancement Mode Power MOSFET

Description

The RM3400A uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a

Battery protection or in other Switching application.

General Features

● V_DS= 30V,I_D= 5.8A

Schematic diagram

R_DS(ON)< 55mΩ @ V_GS=2.5V

_DS(ON)< 42mΩ @ V_GS=4.5V

_DS(ON)< 40mΩ @ V_GS=10V

● High power and current handing capability

● Lead free product is acquired

● Surface mount package

Marking and pin assignment

● PWM applications

● Load switch

● Power management

SOT-23-3L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

3000 units

3400A

RM3400A

SOT-23-3L

Ø180mm

8 mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

V^DS

Gate-Source Voltage

±12

V^GS

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

5.8

I_D

I_DM

Maximum Power Dissipation

1.4

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

℃/W

Electrical Characteristics (T_A=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

_GS=0V I_D=250μA

_DS=30V,V_GS=0V

μA

2021-11/15

REV:B

12 3 4 5 6 7

中文翻译

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与RM3400A相关器件

型号	品牌	获取价格	描述	数据表
RM3400C	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 5.8 A;Maximum Power Dissipation (W) : 0.35 W;Polarity : N-C
RM3401	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 4.2 A;Rds-on (typ) (mOhms) : 48 mOhms;Total Gate Charge (nQ
RM3401C	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 4.2 A;Rds-on (typ) (mOhms) : 50 mOhms;Maximum Power Dissipa
RM3401Y	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 4.2 A;Rds-on (typ) (mOhms) : 47 mOhms;Total Gate Charge (nQ
RM3402	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 4.0 A;Rds-on (typ) (mOhms) : 45 mOhms;Total Gate Charge (nQ
RM3404	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 5.8 A;Rds-on (typ) (mOhms) : 25.5 mOhms;Total Gate Charge (
RM3404Y	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 5.2 A;Total Gate Charge (nQ) typ : 2.8 nQ;Maximum Power Dis
RM3407	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 4.3 A;Rds-on (typ) (mOhms) : 40 mOhms;Total Gate Charge (nQ
RM3407Y	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 4.3 A;Rds-on (typ) (mOhms) : 40 mOhms;Total Gate Charge (nQ
RM3415	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 4.0 A;Rds-on (typ) (mOhms) : 34 mOhms;Total Gate Charge (nQ