Datasheet > RM3139S5

RM3139S5

更新时间： 2024-06-27 12:12:47

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
5页	119K
描述
Vdss (V) : 20 V;Id @ 25C (A) : 0.66 A;Rds-on (typ) (mOhms) : 624 mOhms;Maximum Power Dissipation (W) : 0.15 W;Vgs(th) (typ) : 0.45 V;Input Capacitance (Ciss) : 113 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-523

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中文翻译

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RM3139S5 数据手册

RM3139S5

P-Channel MOSFET

ꢀꢁꢂꢃꢄꢅꢁꢆ

ꢀ

Lead Free Product is Acquired

Surface Mount Package

P-Channel Switch with Low R_DS(on)

SOT523

Operated at Low Logic Level Gate Drive

ꢂꢇꢇꢈꢉꢊꢂꢃꢉꢋꢌ

1. GATE

ꢀ

Load/Power Switching

Interfacing, Logic Switching

Battery Management for Ultra Small Portable Electronics

2. SOURCE

3. DRAIN

Top View

ꢍꢂꢅꢧꢉꢌꢨ

Equivalent Circuit

I_D

V_(BR)DSS

R_DS(on)MAX

ꢀ

ꢏ

ꢎ ꢉꢐꢑꢌꢋꢀ

ꢌꢇꢊꢍ

ꢀ

ꢉꢇꢊ

ꢋ

ꢏ

ꢔꢊꢊꢍꢎ ꢉꢇꢑꢌꢋ

ꢉꢊꢑꢒꢒꢓ

ꢀ

ꢏ

ꢎ

ꢉ±ꢑꢖꢋꢀ

ꢕꢌꢊꢍ

˄ꢀꢗꢘ˅ ꢀ

ꢆ ꢆ

ꢆ

ꢀ

ꢍꢎꢏꢐꢑꢒꢑꢆꢓꢎꢔꢐꢕꢖꢗꢆꢘꢃ_ꢎꢙꢚꢛꢀꢆꢒꢕꢜꢝꢗꢗꢆꢞꢔꢟꢝꢓꢠꢐꢗꢝꢆꢕꢞꢔꢝꢡꢢꢆ

ꢄꢕꢐꢔꢆ

ꢣꢤꢑꢥꢞꢜꢆ

ꢦꢎꢜꢒꢝꢆ

ꢇꢎꢓꢎꢑꢝꢔꢝꢓꢆꢆꢆ

Drain-Source Voltage

V_DS

V_GS

I_D

-20

±±ꢇ

ꢆ

ꢀꢁꢂꢃꢄꢅꢆ Gate-Source Voltage

Continuous Drain Current (note 1)

Pulsed Drain Current (t_p=10s)

Power Dissipation (note 1)

-0.66

-1.2

I_DM

P_D

270

ꢀ/W

ꢀ

Thermal Resistance from Junction to Ambient (note 1)

Junction Temperature

R_ꢈJA

T_J

461

150

Storage Temperature

T_STG

T_L

-55~+150

260

ꢀ

Lead Temperature for Soldering Purposes(1/8” from case for 10 s)

/ 2

2022-03

REV:O

12 3 4 5

中文翻译

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