Datasheet > RM3134K

RM3134K

更新时间： 2024-06-27 12:11:47

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
5页	337K
描述
Vdss (V) : 20 V;Id @ 25C (A) : 0.75 A;Rds-on (typ) (mOhms) : 270 mOhms;Total Gate Charge (nQ) typ : 1.6 nQ;Maximum Power Dissipation (W) : 0.15 W;Vgs(th) (typ) : 0.54 V;Input Capacitance (Ciss) : 79 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-723

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数据手册

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RM3134K 数据手册

ꢀ

ꢀ ꢀ

RM3134K

N-Channel Enhancement MOSFET

Feature

ꢀꢁꢂ,-ꢃ.ꢄ

ꢀ

Advanced Trench Technology

Lead free product is acquired

ESD Protected Up to 2.0KV(HBM)

Application

ꢀ

Interfacing Switching

1. GATE

ꢀ

Load Switching

Logic Level shift

Halogen-free

2. SOURCE

3. DRAIN

ꢀꢁꢂꢃꢄꢅꢆ

Equivalent Circuit

I_D

V_(BR)DSS

R_DS(on)MAX

380m¡˜V_GS=4.5V

450m¡˜V_GS=2.5V

800m¡˜V_GS=1.8V

0.75A

20V

ꢇ ꢇ

ꢇ

ABSOLUTE MAXIMUM RATINGS (T_a=25ć unless otherwise noted)

Parameter

Symbol

V_DS

V_GS

I_D

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T_a=25ć)

Continuous Drain Current (T_a=70ć)

Pulsed Drain Current

0.75

0.4

I_D

I_DM

1.8

Power Dissipation

Thermal Resistance from Junction to Ambient⁽⁴⁾

P_D

0.15

833

R_θJA

T_J

ć/W

Junction Temperature

150

Storage Temperature

T_STG

-55~ +150

2022-01/59

REV:O

ꢀ

12 3 4 5

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