Datasheet > RM3134

RM3134

更新时间： 2024-06-27 12:13:57

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
5页	368K
描述
Vdss (V) : 20 V;Id @ 25C (A) : 0.75 A;Rds-on (typ) (mOhms) : 270 mOhms;Total Gate Charge (nQ) typ : 1.2 nQ;Maximum Power Dissipation (W) : 0.15 W;Vgs(th) (typ) : 0.54 V;Input Capacitance (Ciss) : 79 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-363

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中文翻译

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技术参数
数据手册

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RM3134 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.75
Base Number Matches：	1

RM3134 数据手册

RM3134

Dual N-Channel MOSFET

SOT-363

ꢀ

ꢖ

I_D

V_(BR)DSS

R_DS(on)MAX

ꢒ

ꢐ

ꢏ ꢐꢑꢒꢊ

ꢎ

ꢀ

ꢋꢌꢉꢍ

ꢀ

ꢏ

ꢐꢒꢉꢍꢎ ꢈꢑꢒꢊꢀ

ꢊ

ꢈꢉ

ꢉꢑꢓꢒꢔ

ꢕ

ꢈ

ꢋ

ꢏ

ꢌꢉꢉꢍꢎ ꢕꢑꢌꢊꢀ

ꢀ

ꢀ ꢀ

FEATURE

ꢀ Lead Free Product is Acquired

APPLICATION

ꢀ Load/Power Switching

ꢀ Surface Mount Package

ꢀ Interfacing Switching

ꢀ N-Channel Switch with Low R_DS(on)

ꢀ Operated at Low Logic Level Gate Drive

Equivalent to Two RM3134

ꢀ Battery Management for Ultra Small Portable Electronics

ꢀ Logic Level Shift

ꢁꢂꢃꢄꢅꢆꢇ

ꢀ

Equivalent Circuit

ABSOLUTE MAXIMUM RATINGS (T_a=25ꢀ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-source voltage

V_DS

V_GS

I_D

ꢀꢁꢂꢃꢄꢅꢆꢇGate-source voltage

Continuous drain current (t ꢀ10s)

Power dissipation*

0.75

P_D

0.15

Thermal resistance from junction to ambient

Junction temperature

R_ꢁJA

T_J

833

ꢀ/W

ꢀ

150

Storage temperature

T_stg

-55~ +150

ꢀ

* Repetitive rating : Pulse width limited by junction temperature.

2022-08

REV:D

12 3 4 5

中文翻译

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