Datasheet > RM30P55LD

RM30P55LD

更新时间： 2024-06-27 12:12:14

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	504K
描述
Vdss (V) : 55 V;Id @ 25C (A) : 30 A;Rds-on (typ) (mOhms) : 40 mOhms;Total Gate Charge (nQ) typ : 56 nQ;Maximum Power Dissipation (W) : 65 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 3500 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK)

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RM30P55LD 数据手册

RM30P55LD

P-Channel Enhancement Mode Power MOSFET

Description

The RM30P55LD uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=-55V,I_D=-30A

Schematic diagram

R_DS(ON)<40mΩ @ V_GS=-10V

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

Marking and pin assignment

Application

ƽꢀ Power switching application

ƽꢀ Hard switched and high frequency circuits

ƽꢀ Uninterruptible power supply

Halogen-free

100% UIS TESTED!

TO-252-2L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM30P55LD

TO-252-2L

-ꢀ

30P55

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

-55

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

-30

-21

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

110

I_DM

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy^{(Note 5)}

0.43

W/ć

E_AS

420

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

2.3

ć/W

2019-01/15

REV:A

12 3 4 5 6 7

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