Datasheet > RM30P30D3

RM30P30D3

更新时间： 2024-11-18 18:09:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	433K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 30 A;Rds-on (typ) (mOhms) : 7.0 mOhms;Total Gate Charge (nQ) typ : 35 nQ;Maximum Power Dissipation (W) : 40 W;Input Capacitance (Ciss) : 2150 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : DFN3x3

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RM30P30D3 数据手册

RM30P30D3

P-Channel Enhancement Mode Power MOSFET

Description

The RM30P30D3 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge . This device is suitable for

use as a load switch or in PWM applications.

General Features

ƽ V_DS= -30V,I_D= -30A

R_DS(ON)< 13mΩ @ V_GS=-4.5V

R_DS(ON)< 10mΩ @ V_GS=-10V

Schematic diagram

ƽ High Power and current handing capability

ƽ Lead free product is acquired

ƽ Surface mount package

20P30

xxxx

Application

ƽ PWM applications

ƽ Load switch

DFN 3x3 EP top view

ƽ Power management

Halogen-free

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

30P30

RM30P30D3

DFN3X3

Ø330mm

12mm

2500 units

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

I_D

I_DM

-30

Drain Current-Pulsed ^{(Note 1)}

-90

Maximum Power Dissipation

P_D

T_J,T_STG

Operating Junction and Storage Temperature Range

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Case ^{(Note 2)}

R_θJC

ć/W

2020-03/59

REV:O

12 3 4 5 6

中文翻译

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