Datasheet > RM30N250DF

RM30N250DF

更新时间： 2024-10-15 18:09:35

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	146K
描述
Vdss (V) : 250 V;Id @ 25C (A) : 29 A;Rds-on (typ) (mOhms) : 50 mOhms;Total Gate Charge (nQ) typ : 20 nQ;Maximum Power Dissipation (W) : 150 W;Vgs(th) (typ) : 3.0 V;Input Capacitance (Ciss) : 1584 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6-8L

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RM30N250DF 数据手册

RM30N250DF

Power MOSFET

N-Channel Enhancement Mode

Description

The RM30N250DF uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

Schematic diagram

General Features

ƽ V_DS=250V,I_D=29A

R_DS(ON)<64mΩ @ V_GS=10V

ƽ Excellent gate charge x R_DS(on)product(FOM)

ƽ Very low on-resistance R_DS(on)

ƽ Pb-free lead plating

Marking and pin assignment

ƽ 100% UIS tested

Application

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching and

synchronous

Halogen-free

rectification

100% UIS TESTED!

100% ꢀVds TESTED!

DFN5X6-8L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM30N250DF

30N250

DFN5X6-8L

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

250

Unit

Drain-Source Voltage

Gate-Source Voltage

V^GS

Drain Current-Continuous (Package Limited)

(Tc=25

)

I_D

(Tc=100

)

Pulsed Drain Current

110

150

I_DM

P_D

Maximum Power Dissipation

Single pulse avalanche energy

E_AS

112

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

2020-05/X

REV:O

12 3 4 5 6

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