Datasheet > RM30N100T7

RM30N100T7

更新时间： 2024-06-27 12:13:06

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	721K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 30 A;Rds-on (typ) (mOhms) : 40 mOhms;Total Gate Charge (nQ) typ : 39 nQ;Maximum Power Dissipation (W) : 85 W;Vgs(th) (typ) : 1.9 V;Input Capacitance (Ciss) : 2000 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-247

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RM30N100T7 数据手册

RM30N100T7

N-Channel Enhancement Mode Power MOSFET

Description

The RM30N100T7 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS= 100V,I_D=30A

R_DS(ON)< 50mΩ @ V_GS=10V (Typ:40mΩ)

R_DS(ON)< 60mΩ @ V_GS=5V (Typ:50mΩ)

Schematic diagram

ƽ Special process technology for high ESD capability

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

Halogen-free

Application

TO-247top view

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

-ꢀ

ꢀ

30N100

RM30N100T7

TO-±47

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Symbol

V^DS

Parameter

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±±0

V^GS

±1

I_D

I_D(100ć)

Drain Current-Continuous(TC=100ć)

Pulsed Drain Current

I_DM

Maximum Power Dissipation

170

0.57

±56

P_D

Derating factor

Single pulse avalanche energy^{(Note 5)}

W/ć

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2020-07/15

REV:A

12 3 4 5 6 7

中文翻译

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