Datasheet > RM30N100T2

RM30N100T2

更新时间： 2024-11-18 18:09:35

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	583K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 30 A;Rds-on (typ) (mOhms) : 27 mOhms;Total Gate Charge (nQ) typ : 39 nQ;Maximum Power Dissipation (W) : 85 W;Vgs(th) (typ) : 1.9 V;Input Capacitance (Ciss) : 2000 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM30N100T2 数据手册

RM30N100T2

N-Channel Enhancement Mode Power MOSFET

Description

The RM30N100T2 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS= 100V,I_D=30A

R_DS(ON)< 50mΩ @ V_GS=10V (Typ:40mΩ)

R_DS(ON)< 60mΩ @ V_GS=5V (Typ:50mΩ)

Schematic diagram

Marking and pin assignment

TO-220-3L top view

ƽ Special process technology for high ESD capability

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

Application

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

Halogen-free

100% UIS TESTED!

100% ǻVds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

-ꢀ

TO-220-3L

30N100

RM30N100T2

Absolute Maximum Ratings (T_C=25ććunless otherwise noted)

Symbol

Parameter

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

I_D

I_D(100ć)

I_DM

Drain Current-Continuous(TC=100ć)

Pulsed Drain Current

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.5

W/ć

E_AS

256

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2020-07/15

REV:B

12 3 4 5 6 7

中文翻译

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与RM30N100T2相关器件

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RM30P40D3	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 30 A;Rds-on (typ) (mOhms) : 10.5 mOhms;Total Gate Charge (n
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