Datasheet > RM30N100LD

RM30N100LD

更新时间： 2024-06-27 12:13:35

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	499K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 30 A;Rds-on (typ) (mOhms) : 31 mOhms;Total Gate Charge (nQ) typ :

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中文翻译

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RM30N100LD 数据手册

RM30N100LD

N-Channel Enhancement Mode Power MOSFET

Description

The RM30N100LD uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS= 100V,I_D=30A

Schematic diagram

R_DS(ON)< 50mΩ @ V_GS=10V (Typ:40mΩ)

R_DS(ON)< 60mΩ @ V_GS=5V (Typ:50mΩ)

ƽ Special process technology for high ESD capability

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM30N100LDV

Marking and pin assignment

Application

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

100% UIS TESTED!

TO-252 -2Ltop view

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

30N100

RM30N100LD

TO-252-2L

-ꢀ

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Symbol

V^DS

Parameter

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

I_D

I_D(100ć)

Drain Current-Continuous(TC=100ć)

Pulsed Drain Current

I_DM

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy^{(Note 5)}

0.57

256

W/ć

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2020-07/15

REV:C

12 3 4 5 6 7

中文翻译

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与RM30N100LD相关器件

型号	品牌	获取价格	描述	数据表
RM30N100T2	RECTRON	获取价格	Vdss (V) : 100 V;Id @ 25C (A) : 30 A;Rds-on (typ) (mOhms) : 27 mOhms;Total Gate Charge (nQ
RM30N100T7	RECTRON	获取价格	Vdss (V) : 100 V;Id @ 25C (A) : 30 A;Rds-on (typ) (mOhms) : 40 mOhms;Total Gate Charge (nQ
RM30N250DF	RECTRON	获取价格	Vdss (V) : 250 V;Id @ 25C (A) : 29 A;Rds-on (typ) (mOhms) : 50 mOhms;Total Gate Charge (nQ
RM30N30S8	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 30 A;Rds-on (typ) (mOhms) : 3.2 mOhms;Total Gate Charge (nQ
RM30P30D3	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 30 A;Rds-on (typ) (mOhms) : 7.0 mOhms;Total Gate Charge (nQ
RM30P40D3	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 30 A;Rds-on (typ) (mOhms) : 10.5 mOhms;Total Gate Charge (n
RM30P40D3V	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 30 A;Rds-on (typ) (mOhms) : 10.5 mOhms;Total Gate Charge (n
RM30P55LD	RECTRON	获取价格	Vdss (V) : 55 V;Id @ 25C (A) : 30 A;Rds-on (typ) (mOhms) : 40 mOhms;Total Gate Charge (nQ)
RM30TA-H	MITSUBISHI	获取价格	MEDIUM POWER GENERAL USE INSULATED TYPE
RM30TA-M	MITSUBISHI	获取价格	MEDIUM POWER GENERAL USE INSULATED TYPE