Datasheet > RM3003S6V

RM3003S6V

更新时间： 2024-11-19 18:09:55

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
11页	509K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 3.5A;Rds-on (typ) (mOhms) : 36 mOhms;Total Gate Charge (nQ) typ : 5 nQ;Maximum Power Dissipation (W) : 1.2 W;Input Capacitance (Ciss) : 210 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23-6L;Certified (AEC-Q101...etc) : AEC-Q101

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中文翻译

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RM3003S6V 数据手册

RM3003S6V

N and P-Channel Enhancement Mode Power MOSFET

Description

The RM3003S6V uses advanced trench technology to provide

excellent R_DS(ON), low gate charge. This device is suitable for

use as a Battery protection or in other Switching application.

General Features

N-Channel

N-channel

P-channel

Schematic diagram

V_DS= 30V,I_D= 3.5A

R_DS(ON)

_GS=10V

_GS=4.5V

R_DS(ON)

P-Channel

3003

V_DS= -30V,I_D= -2.7A

R_DS(ON)

_GS=-10V

_GS=-4.5V

Low On-Resistance

Marking and pin Assignment

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM3003S6V

SOT-23-6L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

3000units

3003

RM3003S6V

SOT23-6L

Ø180mm

8mm

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

V_DS

N-Channel P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

3.5

-30

V_GS

T_A=25

T_A=70

-2.7

-2.1

-15

Continuous Drain Current

I_D

Pulsed Drain Current ^{(Note 1)}

Maximum Power Dissipation

I_DM

P_D

T_A=25

1.2

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^(Note2)

N-Ch

P-Ch

104

2022-05/15

REV:O

12 3 4 5 6 7...11

中文翻译

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