Datasheet > RM2N650IP

RM2N650IP

更新时间： 2024-10-31 01:23:51

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
9页	677K
描述
N-Channel Super Junction Power MOSFET

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中文翻译

获取价格

数据手册

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RM2N650IP 数据手册

RM2N650IP

RM2N650LD

N-Channel Super Junction Power MOSFET ĊĊ

General Description

The series of devices use advanced super junction

technology and design to provide excellent R^DS(ON)with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

_DS@T_jmax

710

2.2

R_{DS(ON) TYP}

I_D

Features

ƽNew technology for high voltage device

ƽLow on-resistance and low conduction losses

ƽSmall package

ƽUltra Low Gate Charge cause lower driving requirements

ƽ100% Avalanche Tested

ƽROHS compliant

Application

ƽꢀ Power factor correction˄PFC˅

ƽꢀ Switched mode power supplies(SMPS)

Schematic diagram

Uninterruptible Power Supply˄UPS˅

Package Marking And Ordering Information

Device

Device Package

Marking

RM2N650IP

TO-251

2N650

TO-252

RM2N650LD

2N650

TO-251

TO-252

Table 1. Absolute Maximum Ratings (T_C=25ć)

Parameter

Symbol

Value

Unit

650

f30

Drain-Source Voltage (

VGS 0V˅

VDS

Gate-Source Voltage (VDS 0V)

VGS

Continuous Drain Current at Tc=25°C

I_{D (DC)}

I_{DM (pluse)}

P_D

Continuous Drain Current at Tc=100°C

1.3

(Note 1)

Pulsed drain current

Maximum Power Dissipation(Tc=25ć)

Derate above 25°C

0.184

W/°C

Single pulse avalanche energy ^(Note2)

Avalanche current^{(Note 1)}

I_AR

Repetitive Avalanche energy ˈt_ARlimited by T_jmax

0.06

E_AR

(Note 1)

2016-09

REV:O15

12 3 4 5 6 7...9

中文翻译

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