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RM2AV1 PDF预览

RM2AV1

更新时间: 2024-10-30 15:49:47
品牌 Logo 应用领域
三垦 - SANKEN 二极管
页数 文件大小 规格书
4页 169K
描述
Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,

RM2AV1 技术参数

生命周期:Not Recommended包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.54
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:1.2 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

RM2AV1 数据手册

 浏览型号RM2AV1的Datasheet PDF文件第2页浏览型号RM2AV1的Datasheet PDF文件第3页浏览型号RM2AV1的Datasheet PDF文件第4页 
SANKEN ELECTRIC CO., LTD.  
RM2A  
Scope  
The present specifications shall apply to an RM2A.  
Outline  
Type  
Silicon Diode  
Resin Molded  
Structure  
Applications  
Commercial Frequency Rectification  
Flammability  
UL94V-0(Equivalent)  
Absolute maximum ratings  
No.  
1
Item  
Symbol Unit  
Rating  
650  
Conditions  
Transient Peak Reverse Voltage  
Peak Reverse Voltage  
VRSM  
VRM  
IF(AV)  
IFSM  
I2t  
V
V
2
600  
Refer to derating curve  
in Section 7  
3
Average Forward Current  
Peak Surge Forward Current  
I2t Limiting Value  
A
1.2  
10ms.  
4
A
100  
Half sine wave, one shot  
5
A2s  
°C  
°C  
50  
1mst10ms  
6
Junction Temperature  
Tj  
-40 to +150  
-40 to +150  
7
Storage Temperature  
Tstg  
Electrical characteristics (Ta=25°C, unless otherwise specified)  
No.  
1
Item  
Symbol Unit  
Rating  
Conditions  
Forward Voltage Drop  
Reverse Leakage Current  
VF  
IR  
V
µA  
0.91 max.  
10 max.  
50 max.  
12 max.  
IF=1.5A  
VR=VRM  
2
Reverse Leakage Current Under  
High Temperature  
3
µA  
VR=VRM, Tj=100°C  
HIR  
Rth(j-l)  
4
Thermal Resistance  
°C/W  
Between Junction and Lead  
031117  
14  
61426-01  

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