Datasheet > RM2A8N60S4

RM2A8N60S4

更新时间： 2024-06-27 12:12:43

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	151K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 2.8 A;Rds-on (typ) (mOhms) : 80 mOhms;Total Gate Charge (nQ) typ : 5 nQ;Maximum Power Dissipation (W) : 1.5 W;Input Capacitance (Ciss) : 511 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-223

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RM2A8N60S4 数据手册

RM2A8N60S4

N-Channel Enhancement Mode Power MOSFET

Description

The RM2A8N60S4 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

V_DS= 60V,I_D= 2.8A

R_DS(ON)< 100mΩ @ V_GS=10V

R_DS(ON)< 110mΩ @ V_GS=4.5V

Schematic diagram

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Excellent package for good heat dissipation

6N100

xxxx

Application

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM2A8N60S4V

SOT-223 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2500 units

2A8N60

RM2A8N60S4

SOT-223-3L

Ø330mm

12mm

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V^GS

Drain Current-Continuous

Drain Current-Pulsed^{(Note 1)}

I_D

I_DM

2.8

Maximum Power Dissipation

1.5

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

Electrical Characteristics (T_A=25 unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=48V,V_GS=0V

μA

2019-01/83

REV:O

12 3 4 5 6

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