Datasheet > RM28N650T7

RM28N650T7

更新时间： 2024-06-27 12:12:26

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	2579K
描述
Vdss (V) : 650 V;Id @ 25C (A) : 28 A;Rds-on (typ) (mOhms) : 120 mOhms;Total Gate Charge (nQ) typ : 37.5 nQ;Maximum Power Dissipation (W) : 260 W;Vgs(th) (typ) : 3.5 V;Input Capacitance (Ciss) : 2070 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-247

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RM28N650T7 数据手册

RM28N650T7

N-Channel Super Junction Power MOSFET Ⅲ

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent RDS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

Features

●Optimized body diode reverse recovery performance

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

Schematic diagram

●Ro HS compliant

Intrinsic fast-recovery body diode

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

TO-247

● LLC Half-bridge

Halogen-free

V_DS

650

120

mΩ

Package Marking And Ordering Information

R_DS(ON)TYP

Device

Device Package

Marking

I_D

28N650

RM28N650T7

TO-247

Table 1. Absolute Maximum Ratings (T_C=25℃)

Parameter

Symbol

Value

650

±30

Unit

Drain-Source Voltage (VGS=0V）

VDS

VGS

Gate-Source Voltage (VDS=0V) AC (f>1 Hz)

Continuous Drain Current at Tc=25°C

Continuous Drain Current at Tc=100°C

I_{D (DC)}

I_{DM (pluse)}

P_D

(Note 1)

112

260

2.08

676

5.2

Pulsed drain current

Maximum Power Dissipation(Tc=25℃)

Derate above 25°C

W/°C

(Note 2)

EAS

Single pulse avalanche energy

Avalanche current^{(Note 1)}

I_AR

Repetitive Avalanche energy ，t_ARlimited by T_jmax

(Note 1)

3.2

E_AR

2023-12/15

REV:O

12 3 4 5 6 7

中文翻译

下载PDF

与RM28N650T7相关器件

型号	品牌	获取价格	描述	数据表
RM2941JXQMLV	TI	获取价格	5 V-20V ADJUSTABLE POSITIVE LDO REGULATOR, 1V DROPOUT, CDIP16, CERAMIC, DIP-16
RM2951JXQMLV	TI	获取价格	FIXED/ADJUSTABLE POSITIVE LDO REGULATOR, 0.6V DROPOUT, CDIP8, CERAMIC, DIP-8
RM296C	ETC	获取价格	Logic IC
RM296D	ETC	获取价格	Logic IC
RM2A	BL Galaxy Electrical	获取价格	PLASTIC SILICON RECTIFIER
RM2A	EIC	获取价格	SILICON RECTIFIER DIODES
RM2A	SANKEN	获取价格	Rectifier Diodes
RM2A3P60S4	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 2.3 A;Total Gate Charge (nQ) typ : 8.3 nQ;Maximum Power Dis
RM2A8N60S4	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 2.8 A;Rds-on (typ) (mOhms) : 80 mOhms;Total Gate Charge (nQ
RM2AV	SANKEN	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,