Datasheet > RM28N60ES8

RM28N60ES8

更新时间： 2024-10-15 18:09:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	1332K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 12.6 A;Rds-on (typ) (mOhms) : 9.1 mOhms;Total Gate Charge (nQ) typ : 25 nQ;Maximum Power Dissipation (W) : 3.1 W;Vgs(th) (typ) : 1.9 V;Input Capacitance (Ciss) : 1565 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOP-8

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RM28N60ES8 数据手册

RM28N60ES8

N-Channel Power MOSFET

Description

12.6A

60V，



DS(ON)

<11.3mΩ @ V

= 10V

<19mΩ @ V

= 4.5V

 Trench Power MOSFET Technology

 Low RDSON

Schematic diagram

 High Efficiency Power Supply

Applications

 RoHS and Halogen-Free Complaint

 Secondary Synchronous Rectifier

 100% UIS Tested

SOP-8 top view

 100% Rg Tested

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM28N60ES8

28N60

SOP-8

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameters

Drain-Source Voltage

Symbol

V_DS

Max

Units

Gate-Source Voltage

V_GS

±20

T_A= +25°C

T_A= +70°C

12.6

I_D

Continuous Drain Current

Pulsed Drain Current ^C

Avalanche Current ^C

Avalanche Energy ^C

I_DM

I_AS

E_AS

L=0.3mH

T_A= +25°C

T_A= +70°C

3.1

Power Dissipation^B

P_D

Operating and Storage Temperature Range

-55 to+150

°C

_J, T_G

2024-05

REV:O

12 3 4 5 6 7

中文翻译

下载PDF

与RM28N60ES8相关器件

型号	品牌	获取价格	描述	数据表
RM28N650T7	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 28 A;Rds-on (typ) (mOhms) : 120 mOhms;Total Gate Charge (n
RM2941JXQMLV	TI	获取价格	5 V-20V ADJUSTABLE POSITIVE LDO REGULATOR, 1V DROPOUT, CDIP16, CERAMIC, DIP-16
RM2951JXQMLV	TI	获取价格	FIXED/ADJUSTABLE POSITIVE LDO REGULATOR, 0.6V DROPOUT, CDIP8, CERAMIC, DIP-8
RM296C	ETC	获取价格	Logic IC
RM296D	ETC	获取价格	Logic IC
RM2A	BL Galaxy Electrical	获取价格	PLASTIC SILICON RECTIFIER
RM2A	EIC	获取价格	SILICON RECTIFIER DIODES
RM2A	SANKEN	获取价格	Rectifier Diodes
RM2A3P60S4	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 2.3 A;Total Gate Charge (nQ) typ : 8.3 nQ;Maximum Power Dis
RM2A8N60S4	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 2.8 A;Rds-on (typ) (mOhms) : 80 mOhms;Total Gate Charge (nQ