Datasheet > RM27P30LD

RM27P30LD

更新时间： 2024-10-31 18:09:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	420K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 27 A;Total Gate Charge (nQ) typ : 9.8 nQ;Maximum Power Dissipation (W) : 31.3 W;Input Capacitance (Ciss) : 930 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK)

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RM27P30LD 数据手册

RM27P30LD

P-Channel Enhancement Mode Power MOSFET

Description

The RM27P30LD uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

Schematic diagram

General Features

V_DS=-30V,I_D=-27A

R_DS(ON)<30mΩ @ V_GS=-10V

R_DS(ON)<55mΩ @ V_GS=-4.5V

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Excellent package for good heat dissipation

Application

Marking and pin assignment

Power switching application

Hard switched and high frequency circuits

DC-DC Converter

Halogen-free

100% UIS TESTED!

100% ∆Vds TESTED!

TO-252-2L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

27P30

RM27P30LD

TO-252-2L

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

-27

-17

I_D

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

I_D(100

)

-54

I_DM

=25

)

Maximum Power Dissipation(T_C

31.3

P_D

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance ,Junction-to-Case^{(Note 2)}

R_θJC

2019-03/83

REV:A

12 3 4 5 6

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