Datasheet > RM25N30DN

RM25N30DN

更新时间： 2024-09-17 18:09:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	202K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 25 A;Rds-on (typ) (mOhms) : 10 mOhms;Total Gate Charge (nQ) typ : 15 nQ;Maximum Power Dissipation (W) : 25 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 1530 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN

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RM25N30DN 数据手册

RM25N30DN

N-ChannelEnhancement Mode Power MOSFET

Description

The RM25N30DN uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=30V,I_D=25A

Schematic diagram

R_DS(ON)< 10mΩ @ V_GS=10V

R_DS(ON)< 14mΩ @ V_GS=4.5V

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

Marking and pin Assignment

Application

ƽ SMPS and general purpose applications

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

DFN 3x3 EP top view

100% UIS TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

-ꢀ

3025

RM25N30DN

DFN 3x3 EP

-ꢀ

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

0.2

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

I_DM

Maximum Power Dissipation

P_D

Derating factor

W/ć

Single pulse avalanche energy ^{(Note 5)}

E_AS

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

2016-08

REV:O15

12 3 4 5 6 7

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