Datasheet > RM2520ES6

RM2520ES6

更新时间： 2024-09-16 18:09:15

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
11页	229K
描述
Vdss (V) : 25 V;Id @ 25C (A) : 1.1 A;Rds-on (typ) (mOhms) : 500 mOhms;Total Gate Charge (nQ) typ : 0.6 pC;Maximum Power Dissipation (W) : 0.8 W;Vgs(th) (typ) : 0.7 V;Input Capacitance (Ciss) : 30 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23-6L

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RM2520ES6 数据手册

RM2520ES6

N and P-Channel Enhancement Mode Power MOSFET

Description

The RM2520ES6 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge . The complementary

MOSFETs may be used to form a level shifted high side

switch, and for a host of other applications.

General Features

N-Channel

V_DS= 25V,I_D=1.1A

R_DS(ON)550

650

_GS=4.5V

_GS=2.5V

R_DS(ON)

P-Channel

V_DS= -20V,I_D= -0.8A

2520

800

R_DS(ON)

_GS=-4.5V

_GS=-2.5V

R_DS(ON)1200

ESD >6KV, HBM (Gate-Source Zenner)

High power and current handing capability

Marking and pin Assignment

Lead free product is acquired

Surface mount package

Halogen-free

SOT-23-6L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2520

RM2520ES6

SOT-23-6L

Ø180mm

8mm

3000units

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

N-Channel P-Channel

Unit

-20

(typ.-25)

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

I_D

-0.8

T_A=25

1.1

Continuous Drain Current

Pulsed Drain Current ^{(Note 1)}

Maximum Power Dissipation

I_DM

P_D

-4

0.8

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient

N-Ch

P-Ch

156

Thermal Resistance,Junction-to-Ambient

2019-03/15

REV:D

12 3 4 5 6 7...11

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