RM2333A
P-Channel Enhancement Mode Power MOSFET
Description
D
The RM2333A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
G
S
General Features
ƽ VDS = -12V,ID = -6A
Schematic diagram
RDS(ON) < 45mΩ(max) @ VGS=-2.5V
RDS(ON) < 30mΩ(max) @ VGS=-4.5V
ƽ High power and current handing capability
ƽ Lead free product is acquired
ƽ Surface mount package
Marking and pin assignment
Application
ƽ PWM applications
ƽ Load switch
ƽ Power management
Halogen-free
SOT-23-3L top view
P/N suffix V means AEC-Q101 qualified, e.g:RM2333AV
Device Marking
Device
Device Package
Reel Size
Tape width
mm
Quantity
units
3000
SOT-23-3L
Ø180mm
2319
RM2333A
8
Absolute Maximum Ratings (TA=25ćunless otherwise noted)
Parameter Symbol
Limit
-12
Unit
Drain-Source Voltage
V
V
VDS
VGS
ID
Gate-Source Voltage
±12
Drain Current -Continuous
Drain Current -Pulsed(Note 1)
-6
A
-20
A
IDM
Maximum Power Dissipation
1.8
W
ć
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
69
ć/W
Electrical Characteristics (TA=25ćunless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-12
-
-
V
2019-05/15
REV:C