Datasheet > RM2333

RM2333

更新时间： 2024-10-15 18:09:51

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	664K
描述
Vdss (V) : 12.0 V;Id @ 25C (A) : 6.0 A;Rds-on (typ) (mOhms) : 19 mOhms;Total Gate Charge (nQ) typ

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RM2333 数据手册

RM2333

P-Channel Enhancement Mode Power MOSFET

Description

The RM2333 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a

load switch or in PWM applications.

General Features

ƽ V_DS= -12V,I_D= -6A

Schematic diagram

R_DS(ON)< 45mΩ(max) @ V_GS=-2.5V

R_DS(ON)< 30mΩ(max) @ V_GS=-4.5V

ƽ High power and current handing capability

ƽ Lead free product is acquired

ƽ Surface mount package

Marking and pin assignment

Application

ƽ PWM applications

ƽ Load switch

ƽ Power management

Halogen-free

SOT-23 top view

P/N suffix V means AEC-Q101 qualified, e.g:RM2333V

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

units

3000

SOT-23

Ø180mm

2333

RM2333

Absolute Maximum Ratings (TA=25ćunless otherwise noted)

Parameter Symbol

Limit

-12

Unit

Drain-Source Voltage

V^DS

V^GS

I_D

Gate-Source Voltage

±12

Drain Current -Continuous

Drain Current -Pulsed^{(Note 1)}

-6

-20

I_DM

Maximum Power Dissipation

1.8

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

ć/W

Electrical Characteristics (TA=25ćunless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BV_DSS

V_GS=0V I_D=-250μA

-12

2019-02/15

REV:A

12 3 4 5 6 7

中文翻译

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