Datasheet > RM2310

RM2310

更新时间： 2024-10-31 18:09:07

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	299K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 3.0 A;Rds-on (typ) (mOhms) : 78 mOhms;Total Gate Charge (nQ) typ :

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RM2310 数据手册

RM2310

N-Channel Enhancement Mode Power MOSFET

Description

The RM2310 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a

Battery protection or in other switching application.

Schematic Diagram

General Features

ƽ V_DS=60V,I_D=3A

2310

R_DS(ON)<105mΩ @ V_GS=10V

R_DS(ON)< 125mΩ @ V_GS=4.5V

ƽ High power and current handing capability

ƽ Lead free product is acquired

ƽ Surface mount package

Marking and Pin Assignment

Application

ƽBattery switch

ƽDC/DC converter

Halogen-free

SOT-23 -3L Top View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2310

RM2310

SOT-23-3L

Ø180mm

8 mm

3000 units

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage

V^DS

V^GS

I_D

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

I_DM

Maximum Power Dissipation

1.7

P_D

T_J,T_STG

Operating Junction and Storage Temperature Range

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient^{(Note 2)}

R_θJA

73.5

ć/W

Electrical Characteristics (T_A=25ćunless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=60V,V_GS=0V

μA

2023-02/15

REV:C

12 3 4 5 6 7

中文翻译

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与RM2310相关器件

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