Datasheet > RM2306E

RM2306E

更新时间： 2024-06-27 12:14:07

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	533K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 5.3 A;Rds-on (typ) (mOhms) : 26 mOhms;Total Gate Charge (nQ) typ : 5.7 nQ;Maximum Power Dissipation (W) : 1.39 W;Vgs(th) (typ) : 1.5 V;Input Capacitance (Ciss) : 370 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

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RM2306E 数据手册

RM2306E

N-Channel 30V (D-S) MOSFET , ESD Protected

GENERAL DESCRIPTION

The RM±306E is the N-Channel logic enhancement mode power

field effect transistors are produced using high cell density , DMOS

trench technology. This high density process is especially tailored to

minimize on-state resistance. These devices are particularly suited

for low voltage application such as cellular phone and notebook

computer power management and other battery powered circuits

where high-side switching , and low in-line power loss are needed in

a very small outline surface mount package.

PIN CONFIGURATION

(SOT-±3)

Top View

±306

xxxx

FEATURES

ϥ RDS(ON)Љ31mꢁ@VGS=10V

ϥ RDS(ON)Љ5±mꢁ@VGS=4.5V

ϥ ESD Protected

ϥ Super high density cell design for extremely low RDS(ON)

capability

ϥ Exceptional on-resistance and maximum DC current

APPLICATIONS

ϥ Power Management in Note book

ϥ Portable Equipment

ϥ Load Switch

Absolute Maximum Ratings (TA=±5к Unless Otherwise Noted)

Parameter

Drain-Source Voltage

Symbol

VDS

Unit

Maximum Ratings

Gate-Source Voltage

VGSS

±±0

TA=±5к

T^A=70к

5.3

I^D

Continuous Drain*

4.±

Pulsed Drain Current

Maximum Power Dissipation*

IDM

P^D

±1.±

TA=±5к

T^A=70к

1.39

0.89

Operating Junction Temperature

Storage Temperature Range

T^J

-55 to 150

Tstg

RꢀJA

к˂˪ʳ

Thermal Resistance-Junction to Ambient*

*The device mounted on 1in^±FR4 board with ± oz copper

±018-10/81

REV:O

12 3 4 5 6 7

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与RM2306E相关器件

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RM2308	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 3.0 A;Rds-on (typ) (mOhms) : 78 mOhms;Total Gate Charge (nQ
RM2309	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 3.1 A;Rds-on (typ) (mOhms) : 45 mOhms;Total Gate Charge (nQ
RM2309E	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 3.5 A;Rds-on (typ) (mOhms) : 30 mOhms;Vgs(th) (typ) : 1.8 V
RM230N85HD	RECTRON	获取价格	Vdss (V) : 85 V;Id @ 25C (A) : 238 A;Rds-on (typ) (mOhms) : 2.5 mOhms;Total Gate Charge (n
RM2310	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 3.0 A;Rds-on (typ) (mOhms) : 78 mOhms;Total Gate Charge (nQ
RM2310V	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 3.0 A;Rds-on (typ) (mOhms) : 78 mOhms;Total Gate Charge (nQ
RM2312	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 4.5 A;Rds-on (typ) (mOhms) : 21 mOhms;Total Gate Charge (nQ
RM2316	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 4.0 A;Rds-on (typ) (mOhms) : 31 mOhms;Total Gate Charge (nQ
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