Datasheet > RM2305C

RM2305C

更新时间： 2024-10-15 18:09:31

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
5页	1043K
描述
Vdss (V) : 20 V;Id @ 25C (A) : 4.1 A;Rds-on (typ) (mOhms) : 30 mOhms;Total Gate Charge (nQ) typ : 7.8 nQ;Maximum Power Dissipation (W) : 0.35 W;Input Capacitance (Ciss) : 740 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RM2305C 数据手册

RM2305C

P-ChannelEnhancement Mode Power MOSFET

Description

The RM2305C uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a

load switch or in PWM applications.

General Features

V_DS= -20V,I_D= -4.1A

R_DS(ON)90

R_DS(ON)60

R_DS(ON)45

_GS=-1.8V

_GS=-2.5V

_GS=-4.5V

High power and current handing capability

Lead free product is acquired

Surface mount package

Marking and pin assignment

Application

PWM applications

Load switch

Power management

Halogen-free

SOT-23 top view

Tape width

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

Ø180mm

8 mm

3000 units

RM2305C

SOT-23

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameters

Symbol

Value

-20

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Source-Drain Diode Current

Power Dissipation

VDS

VGS

±12

-4.1

-0.8

350

150

℃

Junction Temperature

Storage Temperature

Thermal Resistance From Junction to Ambient

Tstg

RθJA

-50-+150

357

℃

℃/W

2023-11/97

REV:A

12 3 4 5

中文翻译

下载PDF

与RM2305C相关器件

型号	品牌	获取价格	描述	数据表
RM2306E	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 5.3 A;Rds-on (typ) (mOhms) : 26 mOhms;Total Gate Charge (nQ
RM2308	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 3.0 A;Rds-on (typ) (mOhms) : 78 mOhms;Total Gate Charge (nQ
RM2309	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 3.1 A;Rds-on (typ) (mOhms) : 45 mOhms;Total Gate Charge (nQ
RM2309E	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 3.5 A;Rds-on (typ) (mOhms) : 30 mOhms;Vgs(th) (typ) : 1.8 V
RM230N85HD	RECTRON	获取价格	Vdss (V) : 85 V;Id @ 25C (A) : 238 A;Rds-on (typ) (mOhms) : 2.5 mOhms;Total Gate Charge (n
RM2310	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 3.0 A;Rds-on (typ) (mOhms) : 78 mOhms;Total Gate Charge (nQ
RM2310V	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 3.0 A;Rds-on (typ) (mOhms) : 78 mOhms;Total Gate Charge (nQ
RM2312	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 4.5 A;Rds-on (typ) (mOhms) : 21 mOhms;Total Gate Charge (nQ
RM2316	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 4.0 A;Rds-on (typ) (mOhms) : 31 mOhms;Total Gate Charge (nQ
RM231C	ETC	获取价格	Logic IC