Datasheet > RM2304

RM2304

更新时间： 2024-06-27 12:12:06

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	314K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 3.6 A;Rds-on (typ) (mOhms) : 58 mOhms;Total Gate Charge (nQ) typ :

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RM2304 数据手册

RM2304

N-Channel Enhancement Mode Power MOSFET

Description

The RM2304 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge .This device is suitable

for use as a load switch or in PWM applications.

General Features

ƽ V_DS= 30V,I_D= 3.6A

Schematic diagram

R_DS(ON)< 73mΩ @ V_GS=4.5V

R_DS(ON)<58mΩ @ V_GS=10V

ƽ High power and current handing capability

ƽ Lead free product is acquired

ƽ Surface mount package

Marking and pin assignment

Application

ƽ Battery protection

ƽ Load switch

ƽ Power management

Halogen-free

SOT-23 top view

P/N suffix V means AEC-Q101 qualified, e.g:RM2304V

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2304

RM2304

SOT-23

Ø180mmꢀ

8 mm

3000 unitsꢀ

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

I_D

3.6

Drain Current-Pulsed (Note 1)

I_DM

Maximum Power Dissipation

1.7

P_D

T_J,T_STG

Operating Junction and Storage Temperature Range

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient (Note 2)

R_θJA

73.5

ć/W

Electrical Characteristics (T_A=25ćunless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=30V,V_GS=0V

μA

2018-12/15

REV:A

12 3 4 5 6 7 8

中文翻译

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与RM2304相关器件

型号	品牌	获取价格	描述	数据表
RM2304E	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 3.8 A;Rds-on (typ) (mOhms) : 48 mOhms;Total Gate Charge (nQ
RM2305	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 4.1 A;Rds-on (typ) (mOhms) : 39 mOhms;Total Gate Charge (nQ
RM2305B	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 4.1 A;Rds-on (typ) (mOhms) : 39 mOhms;Total Gate Charge (nQ
RM2305C	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 4.1 A;Rds-on (typ) (mOhms) : 30 mOhms;Total Gate Charge (nQ
RM2306E	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 5.3 A;Rds-on (typ) (mOhms) : 26 mOhms;Total Gate Charge (nQ
RM2308	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 3.0 A;Rds-on (typ) (mOhms) : 78 mOhms;Total Gate Charge (nQ
RM2309	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 3.1 A;Rds-on (typ) (mOhms) : 45 mOhms;Total Gate Charge (nQ
RM2309E	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 3.5 A;Rds-on (typ) (mOhms) : 30 mOhms;Vgs(th) (typ) : 1.8 V
RM230N85HD	RECTRON	获取价格	Vdss (V) : 85 V;Id @ 25C (A) : 238 A;Rds-on (typ) (mOhms) : 2.5 mOhms;Total Gate Charge (n
RM2310	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 3.0 A;Rds-on (typ) (mOhms) : 78 mOhms;Total Gate Charge (nQ